dm n1004 ufd f d atasheet number: ds 39159 rev. 2 - 2 1 of 7 www.diodes.com may 2017 ? diodes incorporated dm n1004 uf d f 12v n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = + 25c 12 v 4 .8 m ? @ v gs = 4.5v 15a 7.0 m ? @ v gs = 2.5v 12a description this new generation mosfet is designed to minimize the on - state res istance (r ds(on) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions features ? 0. 6 mm profile C ideal for low - profile applications ? pcb footprint of 4mm 2 ? low gate threshold voltage ? low on - resistance ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note mechanical data ? case: u - dfn2020 - 6 (type f) ? case material: molded plastic, Dgreen molding compound . ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper leadframe . solderable p er mil - std - 202, method 208 ? weight: 0.00 7 grams ( approximate ) ordering information (note 4 ) part number case packaging dm n 1004 ufd f - 7 u - dfn2020 - 6 (type f) 3,000 /tape & reel dm n10 04 ufd f - 13 u - dfn2020 - 6 (type f) 10 ,000 /tape & reel note s: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com /quality/lead_free.html for more information about diodes incorporated s definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm a ntimony compounds. 4. for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 2017 201 8 201 9 20 20 20 21 20 22 20 2 3 20 24 20 25 code e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d 4u = product type marking code ym = date code marking y = year (ex: e = 201 7 ) m = month (ex: 9 = september) equivalent circuit 4u u - dfn2020 - 6 (type f) pin1 bottom view top view pin out bottom view n4 y m esd protected d s g g ate protection diode e4
dm n1004 ufd f d atasheet number: ds 39159 rev. 2 - 2 2 of 7 www.diodes.com may 2017 ? diodes incorporated dm n1004 uf d f maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 12 v gate - source voltage v gss 8 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 15 12 a pulsed drain cu rren t ( 38 0 s pulse, duty cycle = 1% ) i dm 70 a maximum body diode continuous current (note 6) i s 3 a avalanche current (note 7) l = 0.1 mh i as 34 a avalanche energy (note 7) l = 0.1 mh e as 55 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = + 25c p d 0.9 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 167 c/w total power dissipation (note 6 ) t a = + 25c p d 2.1 w thermal resistance, junction to ambient (note 6 ) s teady state r j a 72 c/w thermal resistance, junction to case (note 6 ) r j c 22 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test c ondition off characteristics ( note 8 ) drain - source breakdown voltage bv dss 12 gs = 0v, i d = 250 a j = + 25c i dss ds = 9.6 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics ( note 8 ) gate threshold voltage v gs(th) 0. 3 ds = v gs , i d = 250 a ds(on) ? gs = 4. 5 v, i d = 15 a gs = 2.5v, i d = 10 a diode forward voltage v sd gs = 0v, i s = 3.2 a dynamic characteristic s (note 9 ) input capacitance c iss ds = 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0 v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 6 v, i d = 10 a total gate charge ( v gs = 1 0v ) q g gs gd d(on) ds = 6 v, i d = 5.0 a v g s = 4.5 v, r g = 1. 0 ? r d(off) f rr f = 2.0 a, di/dt = 100 a/s rr notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 - inch square copper plate . 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm n1004 ufd f d atasheet number: ds 39159 rev. 2 - 2 3 of 7 www.diodes.com may 2017 ? diodes incorporated dm n1004 uf d f 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 1.5 2 2.5 3 v = 2.5v gs v = 3.0v gs v = 1.2v gs v = 4.5v gs v = 1.5v gs v = 2.0v gs v = 1.0v gs v = 0.9v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 3.00 3.50 4.00 4.50 5.00 5.50 6.00 0 5 10 15 20 25 30 v = 4.5v gs v = 2.5v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 i = 15a d i = 10a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 1 2 3 4 5 0 5 10 15 20 25 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v gs i = 15a d v = 2.5v gs i = 10a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm n1004 ufd f d atasheet number: ds 39159 rev. 2 - 2 4 of 7 www.diodes.com may 2017 ? diodes incorporated dm n1004 uf d f figure 8 gate threshold variation vs. junction temperature 0.001 0.002 0.003 0.004 0.005 0.006 0.007 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v gs i = 15a d v = 2.5v gs i = 10a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 100 1000 10000 0 2 4 6 8 10 12 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 v = 6v ds i = 5a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0.01 0.1 1 10 100 0.01 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j (m ax ) t = 25c c v = 4.5v gs single pulse dut on 1 * mrp board i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm n1004 ufd f d atasheet number: ds 39159 rev. 2 - 2 5 of 7 www.diodes.com may 2017 ? diodes incorporated dm n1004 uf d f 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? ja ja r = 72c/w ? ja duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm n1004 ufd f d atasheet number: ds 39159 rev. 2 - 2 6 of 7 www.diodes.com may 2017 ? diodes incorporated dm n1004 uf d f package outline dimensions please see http://www.diodes.com/p ackage - outlines.html for the latest version. u - dfn2020 - 6 (type f) u - dfn2020 - 6 (type f) dim min max typ a 0.57 ? ? a1 0.00 0.05 0.03 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 d2a 0.33 0.43 0.38 e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e2a 0.65 0.75 0.70 e 0.65 bsc e2 0.863 bsc e3 0.70 bsc e4 0.325 bsc k 0.37 bsc k1 0.15 bsc k2 0.36 bsc l 0.225 0.325 0.275 z 0.20 bsc z1 0.110 bsc z2 0.20 bsc all dimensions in mm suggested pad layout please see http:// www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type f) dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 d d2 e e b l e2 a a3 seating plane a1 z(4x) e2 e2a d2a z1 e3 e4 k2 k k1 z2 pin1 y4 y2 y x c x3 y1 x1 x2 y3
dm n1004 ufd f d atasheet number: ds 39159 rev. 2 - 2 7 of 7 www.diodes.com may 2017 ? diodes incorporated dm n1004 uf d f important notice diodes incorporate d makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any li ability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. thi s document is written in english but may be translated into multiple languages for reference. only the english version of thi s document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are s pecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labe ling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support d evice or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support tha t may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or system s. copyright ? 201 7 , diodes incorporated www.diodes.com
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